Semi-empirical efficiency calculation of Ge-semiconductor detector.

نویسندگان

چکیده

برای دانلود باید عضویت طلایی داشته باشید

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

Semi-empirical calculation of quenching factors for scintillators: new results

New results of calculation of quenching factors for ions in scintillators in semi-empirical approach described in [1] are presented. In particular, they give additional arguments in favour of hypothesis that quenching factors for different particles can be described with the same Birks factor kB, if all the data were collected in the same conditions and processed in the same way.

متن کامل

Continuous Measurement of Environmental Gamma Radiation in Tokyo Using Ge Semiconductor Detector

INTRODUCTION Radon and its progeny are natural radioactive nuclides and exist in various places on the earth. Some of the radon progeny in air and clouds is transferred into rainwater. It has often been observed that gamma radiation at ground level increases on a rainy day. The increase of natural background gamma radiation disturbs the estimates of the influence of artificial radioactive nucli...

متن کامل

Semi Empirical Calculation of Intermolecular Potentials and Transport Properties of Some Binary and Ternary Industrial Refrigerant Mixtures

In this study the intermolecular potential energies of some environment-friendly industrial HFC refrigerants were obtained through the inversion method which is based on the corresponding states principle. These potentials were later employed in calculation of transport properties (viscosity, diffusion, thermal conductivity and thermal diffusion factor) of some binary and ternary refrigerant mi...

متن کامل

High-efficiency metal-semiconductor-metal photodetectors on heteroepitaxially grown Ge on Si.

We demonstrate extremely efficient germanium-on-silicon metal-semiconductor-metal photodetectors with responsivities (R) as high as 0.85 A/W at 1.55 microm and 2V reverse bias. Ge was directly grown on Si by using a novel heteroepitaxial growth technique, which uses multisteps of growth and hydrogen annealing to reduce surface roughness and threading dislocations that form due to the 4.2% latti...

متن کامل

About Ge(Mn) diluted magnetic semiconductor

Deposition of 0.5 monolayer of Mn by molecular beam epitaxy on the surface of a Ge(0 0 1) substrate, and annealing, allowed the fabrication of a cluster-free Ge(Mn) diluted solution. Electronic spin resonance (ESR) was used to study the magnetic properties of this solution. These measurements, combined with secondary ion mass spectrometry, atomic force microscopy, and Auger electron spectroscop...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

ژورنال

عنوان ژورنال: RADIOISOTOPES

سال: 1987

ISSN: 1884-4111,0033-8303

DOI: 10.3769/radioisotopes.36.8_379